STIMULATION OF THE EFFECT OF TEMPERATURE ON THE ELECTRICAL CONDUCTIVITY AND CARRIER CONCENTRATION OF INTRINSIC AND EXTRINSIC SEMICONDUCTORS

Abstract

The impacts of temperature variations on the electrical conductivity and carrier concentration of some intrinsic and extrinsic semiconductors materials were studied. The response of the semiconductors materials for the doped and undoped species for ranges of temperature 0k to 1500k were considered. The MATLAB Simulink simulation software was applied to the variables associated with electrical conductivity and carrier concentration of Silicon, Germanium and Gallium Arsenide. The results revealed a significant increase in carrier concentration and conductivity with increasing temperature for an undoped semiconductor material, whereas three regions were identified for doped materials: the ionization or freeze out region, where the rapid increase in carrier concentration is totally dependent on both temperature and dopant levels; the extrinsic region, where the increase in carrier concentration is totally dependent on dopant levels only; and the intrinsic region, where the increase in carrier concentration is totally dependent on temperature only.